document number: 93297 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 schottky rectifier, 3.5 a vs-30wq04fn-m3 vishay semiconductors features ? low forward voltage drop ? guard ring for enhanced ruggedness and long term reliability ? halogen-free according to iec 61249-2-21 definition ? popular d-pak outline ? small foot print, surface mountable ? high frequency operation ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec description the vs-30wq04fn-m3 surface mount schottky rectifier has been designed for applic ations requiring low forward drop and small foot prints on pc board. typical applications are in disk drives, switchin g power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. product summary package d-pak (to-252aa) i f(av) 3.5 a v r 40 v v f at i f see electrical table i rm 24 ma at 125 c t j max. 150 c diode variation single die e as 8 mj anode 1 3 base cathode anode 4, 2 d-pak (to-252aa) major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 3.5 a v rrm 40 v i fsm t p = 5 s sine 500 a v f 3 apk, t j = 125 c 0.49 v t j - 40 to 150 c voltage ratings parameter symbol vs-30wq04fn-m3 units maximum dc reverse voltage v r 40 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current see fig. 5 i f(av) 50 % duty cycle at t c = 135 c, rectangu lar waveform 3.5 a maximum peak one cycle non-repetitive surge current see fig. 7 i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 500 10 ms sine or 6 ms rect. pulse 80 non-repetitive avalanche energy e as t j = 25 c, i as = 1 a, l = 16 mh 8.0 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93297 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-nov-10 vs-30wq04fn-m3 vishay semiconductors schottky rectifier, 3.5 a note (1) pulse width < 300 s, duty cycle < 2 % note (1) thermal runaway condition fo r a diode on its own heatsink electrical specifications parameter symbol test co nditions values units maximum forward voltage drop see fig. 1 v fm (1) 3 a t j = 25 c 0.53 v 6 a 0.67 3 a t j = 125 c 0.49 6 a 0.62 maximum reverse leakage current see fig. 2 i rm (1) t j = 25 c v r = rated v r 2 ma t j = 125 c 24 threshold voltage v f(to) t j = t j maximum 0.34 v forward slope resistance r t 37.33 m typical junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 189 pf typical series inductance l s measured lead to lead 5 mm from package body 5.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation see fig. 4 4.7 c/w approximate weight 0.3 g 0.01 oz. marking device case style d-pa k (similar to to-252aa) 30wq04fn dp tot dt j ------------- 1 r thja -------------- <
document number: 93297 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-30wq04fn-m3 schottky rectifier, 3.5 a vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 100 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0 t j = 150 c t j = 125 c t j = 25 c 10 0.001 0.01 0.1 1 10 100 i r - reverse current (ma) v r - reverse voltage (v) 5 10152025303540 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 15 20 25 30 35 40 45 0 5 t j = 25 c 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93297 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-nov-10 vs-30wq04fn-m3 vishay semiconductors schottky rectifier, 3.5 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 110 115 120 125 135 140 145 150 130 155 allowable case temperature (c) i f (av) - average forward current (a) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 dc see note (1) square wave (d = 0.50) 80 % rated v r applied 0 0.5 1.0 1.5 2.0 2.5 3.0 average power loss (w) i f (av) - average forward current (a) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 10 100 1000 i fsm - non- repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
document number: 93297 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-nov-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-30wq04fn-m3 schottky rectifier, 3.5 a vishay semiconductors ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-30wq04fn-m3 75 3000 antistatic plastic tube vs-30WQ04FNTR-M3 2000 2000 13" diameter reel vs-30wq04fntrl-m3 3000 3000 13" diameter reel vs-30wq04fntrr-m3 3000 3000 13" diameter reel links to related documents dimensions www.vishay.com/doc?95016 part marking information www.vishay.com/doc?95176 packaging information www.vishay.com/doc?95033 spice model www.vishay.com/doc?95288 1 - vishay semiconductors product 2 - current rating (3.5 a) 3 - package identifier: w = d-pak 4 - schottky ?q? series 5 - voltage rating (04 = 40 v) 6 - fn = to-252aa (d-pak) 7 - none = tube tr = tape and reel trl = tape and reel (left oriented) trr = tape and reel (right oriented) - environmental digit: -m3 = halogen-free, rohs compliant and terminations lead (pb)-free 8 device code 5 1 3 2 4 6 7 8 vs- 30 w q 04 fn trl -m3
document number: 95016 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 04-nov-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 d-pak (to-252aa) outline dimensions vishay high power products notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) lead dimension uncontrolled in l5 (3) dimension d1, e1, l3 and b3 establish a mi nimum mounting surface for thermal pad (4) section c - c dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) dimension d, and e do not include mold flash. mold flash shall not exceed 0.127 mm (0. 005") per side. these dimensions are meas ured at the outermost extremes of the plastic body (6) dimension b1 and c1 applied to base metal only (7) datum a and b to be determined at datum plane h (8) outline conforms to jedec outline to-252aa dimensions in millimeters and inches symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 2.18 2.39 0.086 0.094 e 2.29 bsc 0.090 bsc a1 - 0.13 - 0.005 h 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 l 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 l1 2.74 bsc 0.108 ref. b3 4.95 5.46 0.195 0.215 3 l2 0.51 bsc 0.020 bsc c 0.46 0.61 0.018 0.024 l3 0.89 1.27 0.035 0.050 3 c2 0.46 0.89 0.018 0.035 l4 - 1.02 - 0.040 d 5.97 6.22 0.235 0.245 5 l5 1.14 1.52 0.045 0.060 2 d1 5.21 - 0.205 - 3 ? 0 10 0 10 e 6.35 6.73 0.250 0.265 5 ?1 0 15 0 15 e1 4.32 - 0.170 - 3 ?2 25 35 25 35 ? 1 e (5) b 3 (3) 0.010 cab l3 (3) b a c h c l2 d (5) l4 b 2 x e b 2 (2) l5 1 2 3 4 ? 2 a c2 a a h seating plane c detail ?c? (7) seating plane a1 detail ?c? rotated 90 cw scale: 20:1 (l1) c c l ? ga u ge plane lead tip m 0.010 cab m 32 4 1 e1 d1 mi n . 0.265 (6.74) mi n . 0.245 (6.23) mi n . 0.0 8 9 (2.2 8 ) mi n . 0.06 (1.524) 0.4 88 (12.40) 0.409 (10.40) 0.093 (2.3 8 ) 0.0 8 5 (2.1 8 ) pad layout
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